COMPARISON OF SINGLE AND MULTIPLE PERIOD MODULATION DOPED AL_XGA_1-XAS/GAAS HETEROSTRUCTURES FOR FETSDRUMMOND TJ; KEEVER M; MORKOC H et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 2; PART. 1; PP. L65-L67; BIBL. 8 REF.Article

A NEW AL_0.3GA_0.7AS/GAAS MODULATION-DOPED FETKOPP W; FISCHER R; THORNE RE et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 5; PP. 109-111; BIBL. 17 REF.Article

Modulation-doped field-effect transistor based on a two-dimensional hole gasSTORMER, H. L; BALDWIN, K; GOSSARD, A. C et al.Applied physics letters. 1984, Vol 44, Num 11, pp 1062-1064, issn 0003-6951Article

Etude expérimentale des propriétés de transport électronique au voisinage d'une hétérojonction par photoconductionRousseau, Michel; Laval, Suzanne.1989, 297 p.Thesis

Lateral photovoltage as a probe of MODFET channel disorderANAGNOSTAKIS, E. A.Physica status solidi. B. Basic research. 1992, Vol 172, Num 2, pp K61-K63, issn 0370-1972Article

Piezoreflectance characterization of resonant tunnelin and modulation-doped heterostructuresTOBER, R. L; PAMULAPATI, J; BHATTACHARYA, P. K et al.Journal of electronic materials. 1989, Vol 18, Num 3, pp 379-384, issn 0361-5235, 6 p.Article

Bias dependence of capacitances in modulation-doped FET's at 4 GHzARNOLD, D; KOPP, W; FISCHER, R et al.IEEE electron device letters. 1984, Vol 5, Num 4, pp 123-125, issn 0741-3106Article

Encoding electronic properties by synthesis of axial modulation- doped silicon nanowiresCHEN YANG; ZHAOHUI ZHONG; LIEBER, Charles M et al.Science (Washington, D.C.). 2005, Vol 310, Num 5752, pp 1304-1307, issn 0036-8075, 4 p.Article

The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasersMAXIMOV, M. V; SHERNYAKOV, Yu M; ZUBOV, F. I et al.Semiconductor science and technology. 2013, Vol 28, Num 10, issn 0268-1242, 105016.1-105016.5Article

Stochastic assembly of sublithographic nanoscale interfacesDEHON, André; LINCOLN, Patrick; SAVAGE, John E et al.IEEE transactions on nanotechnology. 2003, Vol 2, Num 3, pp 165-174, issn 1536-125X, 10 p.Article

Secondary ion mass spectrometry analysis of Mg doped GaN films prepared by hot wall epitaxyISHIDA, A; MATSUDA, K; CHU, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 59, Num 1-3, pp 230-234, issn 0921-5107Conference Paper

Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)LIU, R.-C; LIU, W.-C.Microelectronics and reliability. 1998, Vol 38, Num 3, pp 367-372, issn 0026-2714Article

Carrier mobilities in modulation doped Si_1-xGe_x heterostructures with respect to FET applicationsHÖCK, G; GLÜCK, M; HACKBARTH, T et al.Thin solid films. 1998, Vol 336, Num 1-2, pp 141-144, issn 0040-6090Conference Paper

Modulation-doped multi-quantum well (MD-MQW) lasers. II, ExperimentUOMI, K; MISHIMA, T; CHINONE, N et al.Japanese journal of applied physics. 1990, Vol 29, Num 1, pp 88-94, issn 0021-4922, 1Article

High-sensitivity modulation-doped quantum dot infrared photodetectorsHIRAKAWA, K; LEE, S.-W; LELONG, Ph et al.Microelectronic engineering. 2002, Vol 63, Num 1-3, pp 185-192, issn 0167-9317Conference Paper

Analysis of quantum lifetime behaviour in modulation-doped n-channel Si/Si_1-xGe_x structuresSHIN, D.-H; BECKER, C. E; HARRIS, J. J et al.Semiconductor science and technology. 1998, Vol 13, Num 10, pp 1106-1110, issn 0268-1242Article

High performance (f_T∼500GHz) In_0.52Al_0.48As/ In_0.53Ga_0.47As/InP quantum wire modfets employing asymmetric coupled-well channelsHELLER, E. K; ISLAM, S. K; ZHAO, G et al.International journal of infrared and millimeter waves. 1998, Vol 19, Num 8, pp 1047-1058, issn 0195-9271Article

Electrical properties of two-dimensional electron gases grown on cleaned SiGe virtual substratesPAUL, D. J; AHMED, A; GRIFFIN, N et al.Thin solid films. 1998, Vol 321, Num 1-2, pp 181-185, issn 0040-6090Conference Paper

Persistent photoconductance in doping-modulated and compensated a-Si:HHAMED, A. J.Physical review. B, Condensed matter. 1991, Vol 44, Num 11, pp 5585-5602, issn 0163-1829Article

Charge control model of inverted GaAs-AlGaAs modulation doped FET's (IMODFET's)LEE, K; SHUR, M; DRUMMOND, T. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1984, Vol 2, Num 2, pp 113-116, issn 0734-211XArticle

Modulation-doped Ga_0.47In_0.53As/Al_0.48In_0.52As planar photoconductive detectors for 1.0-1.55-μm applicationsCHEN, C. Y; PANG, Y. M; GARBINSKI, P. A et al.Applied physics letters. 1983, Vol 43, Num 3, pp 308-310, issn 0003-6951Article

Characterization of the anomalous giant piezoresistance in AlAs two-dimensional electrons with anti-dot latticesGUNAWAN, O; GOKMEN, T; DE POORTERE, E. P et al.Semiconductor science and technology. 2008, Vol 23, Num 8, issn 0268-1242, 085005.1-085005.4Article

New quantum dot transistorMOKEROV, V. G; FEDOROV, Yu. V; VELIKOVSKI, L. E et al.SPIE proceedings series. 2002, pp 273-277, isbn 0-8194-4500-2, 2VolConference Paper

Isotype heterojunctions with flat valence or conduction bandBABIC, D. I; DÖHLER, G. H; BOWERS, J. E et al.IEEE journal of quantum electronics. 1997, Vol 33, Num 12, pp 2195-2198, issn 0018-9197Article

Optoelectronic nanoheterointerface functional eigenstate photodynamicsANAGNOSTAKIS, E. A.Physica. B, Condensed matter. 2010, Vol 405, Num 1, pp 38-40, issn 0921-4526, 3 p.Article